AFM Observation of GaN Grown on Different Substrates at Low Temperatures

目的研究衬底温度与ＧａＮ形貌及其性能之间的关系．方法用氢化物化学气相沉积方法，在不同类型的衬底，Ｓｉ（１１１），Ｓｉ（１００），ＧａＡｓ，ＧａＰ（１１１）的Ｐ和Ｇａ面上气相生长ＧａＮ薄膜材料，生长是在低于７００℃的温度下进行的。用ＸＲＤ，霍尔测量，阴极荧光及原子力显微镜表征薄膜的性质．结果发现温度和衬底类型影响生长层的形貌．

Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results\ It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion\ The analysis shows that no apparent relationship exists between the optical properties and layer morphology.