摘要
Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle size of semiconductor crystallites from X_ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength diraction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third_order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.
Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle size of semiconductor crystallites from X_ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength diraction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third_order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.
基金
theNational"86 3"ResearchProjectFoundationofChina
