摘要
Based on Tai’ s high - order bidirectional associative memory ( HOBAM) and Stmposon’ s intraconnected BAM (IBAM) , two Improved models are first presented and discussed in this paper. The improved models not only retain the advantages of both HOBAM and ISAM but overcome the shortcomings of Kosko’ s BAM also. Secondly their recall stabilities in synchronous and asyn-chronous update modes have been proven by defining corresponding energy functions which decrease as the re-call process proceeds such that the systems can ensure all the training pattern pairs to become local minima of the energy surfaces. Finally with signal - to - noise ratio (SNR) approach, we show that their storage capacities and error correction capabilities are better than that of the HOBAM.
Based on Tai' s high - order bidirectional associative memory ( HOBAM) and Stmposon' s intraconnected BAM (IBAM) , two Improved models are first presented and discussed in this paper. The improved models not only retain the advantages of both HOBAM and ISAM but overcome the shortcomings of Kosko' s BAM also. Secondly their recall stabilities in synchronous and asyn-chronous update modes have been proven by defining corresponding energy functions which decrease as the re-call process proceeds such that the systems can ensure all the training pattern pairs to become local minima of the energy surfaces. Finally with signal - to - noise ratio (SNR) approach, we show that their storage capacities and error correction capabilities are better than that of the HOBAM.
