摘要
The interfaces and interface electron states in Mylar/Al/UCL/CGL/CTL multi-layered photoreceptor are discussed. The interface electron states between CGL and CTL in sample A efficiently accelerated photogeneration carrier transport processes to bring about a lower V-r value and higher light sensitivity than sample B. The process might be interpreted as a kind of assistance sensitization effect based on interfacial electron states in the high fields; that is to say, the interface electron states between CGL and CTL accelerated carriers injection from CGL into the gap states of CTL, and followed by the interface electron states modulated transport processes of carriers in the CTL.
The interfaces and interface electron states in Mylar/Al/UCL/CGL/CTL multi-layered photoreceptor are discussed. The interface electron states between CGL and CTL in sample A efficiently accelerated photogeneration carrier transport processes to bring about a lower Vr value and higher light sensitivity than sample B. The process might be interpreted as a kind of assistance sensitization effect based on interfacial electron states in the high fields; that is to say, the interface electron states between CGL and CTL accelerated carriers injection from CGL into the gap states of CTL, and followed by the interface electron states modulated transport processes of carriers in the CTL.
基金
theNationalNaturalScienceFoundationofChina (GrantNo .29473141)andOrganicSolidsLaboratoryFoundation
