摘要
Quaternary Ga x In 1- x As 1- y Sb y alloys were grown on GaSb substrates by MOCVD using trimethylgallium, trimethylindium, trimethylantimony and dilutedarsine as the precursors. The dependence of the alloy′s compositions x and y (x,y >0.6) on the growth parameters were investigated. It was found that the Ga(Ⅲ) ratio and Sb(Ⅴ) ratio play a major role in determining x and y , respectively. An unusual effect of adding AsH 3 concentration in vapor phase on the Sb concentration in the solid for a constant value of Sb(Ⅴ) ratio is attributed to the effect of surface kinetics. The substrate temperature dependence of the compositions was described.
Quaternary Ga x In 1- x As 1- y Sb y alloys were grown on GaSb substrates by MOCVD using trimethylgallium, trimethylindium, trimethylantimony and dilutedarsine as the precursors. The dependence of the alloy′s compositions x and y (x,y >0.6) on the growth parameters were investigated. It was found that the Ga(Ⅲ) ratio and Sb(Ⅴ) ratio play a major role in determining x and y , respectively. An unusual effect of adding AsH 3 concentration in vapor phase on the Sb concentration in the solid for a constant value of Sb(Ⅴ) ratio is attributed to the effect of surface kinetics. The substrate temperature dependence of the compositions was described.
