摘要
研究了邻菲啉化学修饰碳糊电极,在含噻吩甲酰三氟丙酮的HAc-NaAc体系中,Co(Ⅱ)离子经化学富集在电极表面上形成三元络合物。采用2.5次微分伏法测定痕量钴。Co(Ⅱ)浓度在8.0×10-9~7.0×10-7mol·L-1范围内与阳极溶出峰峰高呈良好的线性关系,检出限达1.2×10-9mol·L-1.电极用于水样中钴的测定,结果令人满意。
The preperation of phenanthroline chemically modified carbon psate electrode and electyochemical characteristics of the electrode in HAc-NaAc medium were described. Owing to the synergistic effect of HTTA, the ternary complex was formed on the electrode surface. Using2.5-order differential voltammetry and for a chemical preconcentration time of 7min ,the mothod showed goog linearly for 8.0×10 -9 to 7.0×10 -7 mol\5L -1 cobalt (Ⅱ). The deteclion limit is 10 -6 mol\5L -1 for cobalt. The recommended procedure can be used for the determination of trace amount of cobalt in natural water. [WT10.5,10.25HZ]
出处
《广东工业大学学报》
CAS
1997年第S1期128-130,共3页
Journal of Guangdong University of Technology
关键词
化学修饰碳糊电极
三元络合物
溶出伏安法
chemically modified carbonpaste electrode
ternary complex
stripping voltammetry