摘要
In order to reduce collector capacitance, the high speed Si phototransistor with grid pattern is presented. The advantages and disadvantages of grid pattern are analyzed. Through optimum design of geometries, device configurations and material parameters and reduction of the diffusion capacitance and the base resistance, the response time of Si phototransistor is shorter than 0.7 μs for the first time.
In order to reduce collector capacitance, the high speed Si phototransistor with grid pattern is presented. The advantages and disadvantages of grid pattern are analyzed. Through optimum design of geometries, device configurations and material parameters and reduction of the diffusion capacitance and the base resistance, the response time of Si phototransistor is shorter than 0.7 μs for the first time.
