摘要
Strained SiGe alloys are successfully grown on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions are monitored by in situ reflection high energy electron diffraction during epitaxy. At a fixed substrate temperature, the Ge composition in the alloys increase with GeH 4/(GeH 4+2Si 2H 6) gas flow rate ratio. Surface morphologies of the grown samples show a strong dependence on the Ge composition, substrate temperature and SiGe epilayer thickness. Results indicate that high substrate temperature and large Ge composition are favorable for the growth mode transition from two dimensional to three dimensional growth.
Strained SiGe alloys are successfully grown on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions are monitored by in situ reflection high energy electron diffraction during epitaxy. At a fixed substrate temperature, the Ge composition in the alloys increase with GeH 4/(GeH 4+2Si 2H 6) gas flow rate ratio. Surface morphologies of the grown samples show a strong dependence on the Ge composition, substrate temperature and SiGe epilayer thickness. Results indicate that high substrate temperature and large Ge composition are favorable for the growth mode transition from two dimensional to three dimensional growth.
