氧化钇稳定的氧化锆上外延硅生长的研究

STUDIES OF EPITAXIAL GROWTH OF SILICON ON YTTRIA-STABILIZED ZIRCONIA

绝缘衬底上高质量亚微米厚硅单晶膜的获得对于制成高速度、高集成度、低功能和抗辐射的集成电路十分重要.蓝宝石上外延硅膜的生长和其CMOS/SOS集成电路的研究已为国内外学者所重视.然而氧化钇稳定的氧化锆(Yt-tria-Stabilized cubic Zirconia简称 YSZ)上异质外延硅膜(Silicon on Ziroonia简称SOZ)的性能比SOS材料更好.这是因为,第一,立方结构YSZ与金钢石结构硅的晶格失配比SOS为小.第二,Zr,和Y元素不是电活性或弱电活性元素,故外延过程中的自掺杂效应比SOS为小,容易获得最佳硅单晶膜.更重要的是YSZ衬底的成本较低,为蓝宝石衬底成本的1/3到1/4.因而,SOZ材料是一个极有应用前途的新材料.

Using the prolysis of SiH4, the epitaxial growth of silicon films on yttria-stabilized, cubic ziroonia substrate has been investigated. The results indicate that high temperature annealing prior to epitaxial growth is necessary ior obtaining single crystalline silicon films. The annealing temperature of predeposition is above 1250℃ for 120 min. Using TEM and AES to analyze the films, it is shown that the single crystalline silicon films are good and have high resistivity.