摘要
YBa 2Cu 3O 7- x (YBCO) thin film has been deposited on Si substrate with CeO 2 buffer layer and shows a relatively high critical transport current density J c exceeding 1 0×10 6 A/cm 2 at 77 K in zero magnetic field. The orientation relationship of the multilayer films has been studied. The (001) plane of YBCO film is parallel to the (100) plane of Si substrate. The CeO 2 buffer layer consists of many small(40 nm×100 nm) column like crystal grains which have different orientations. Although the theoretical lattice mismatch between CeO 2 and Si is very small(about 0 4%), CeO 2 can not grow epitaxially on Si substrate yet. Because of habit growth, YBCO grows with c orientation preference on scattered oriented CeO 2. A thin amorphous layer between Si and CeO 2 has been observed. There exist several Y 2BaCuO 5(211 phase) grains in the interface of CeO 2 and YBCO. A 123 and 248 phase miscellany region and several Y 2O 3 inclusions have been observed.
YBa 2Cu 3O 7- x (YBCO) thin film has been deposited on Si substrate with CeO 2 buffer layer and shows a relatively high critical transport current density J c exceeding 1 0×10 6 A/cm 2 at 77 K in zero magnetic field. The orientation relationship of the multilayer films has been studied. The (001) plane of YBCO film is parallel to the (100) plane of Si substrate. The CeO 2 buffer layer consists of many small(40 nm×100 nm) column like crystal grains which have different orientations. Although the theoretical lattice mismatch between CeO 2 and Si is very small(about 0 4%), CeO 2 can not grow epitaxially on Si substrate yet. Because of habit growth, YBCO grows with c orientation preference on scattered oriented CeO 2. A thin amorphous layer between Si and CeO 2 has been observed. There exist several Y 2BaCuO 5(211 phase) grains in the interface of CeO 2 and YBCO. A 123 and 248 phase miscellany region and several Y 2O 3 inclusions have been observed.
