镶嵌GaAs纳米颗粒的量子尺寸效应

Quantum Size Effect of GaAs Nanoparticles Embedded in SiO_2

镶嵌ＧａＡｓ纳米颗粒的量子尺寸效应戚震中（上海交通大学信息存储研究中心）镶嵌在介质中的纳米半导体颗粒因受到周围介质势垒的限域作用，导致量子限域效应，与其载流子有关的光吸收行为发生改变。半导体颗粒的直径为纳米量级时，限域效应将使能带分裂为分立的能级。采...

Embedded nanocomposite film GaAs/SiO2 has been prepared by d. c.magnetron sputtering and the particle size of GaAs was controlled in the range of 3-10nm.The optical absorption curves shift to the higher energy side when the radius of GaAs decreases. Blue shift for 3nm GaAs is △E=2. 47eV.