摘要
本文分析了ＥＣＲＰＥＣＶＤ制备的Ｓｉ３Ｎ４薄膜的表面平整度特性，随着基片沉积温度的提高，Ｓｉ３Ｎ４薄膜的表面平整度变好，该膜具有良好的透光性；
In this paper, the surface planeness of Si 3N 4 thin film prepared by ECR PECVD has been analyzed. Increasing deposition temperature the surface planeness of Si 3N 4 thin film can be improved and the Si 3N 4 thin film has a good transmittance. The mechanism of affect of the deposition temperature on the surface planeness of Si 3N 4 thin film has been analyzed.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1996年第S1期44-47,共4页
Journal of South China University of Technology(Natural Science Edition)
