摘要
对用直流等离子体化学气相沉积(DC—PCVD)法得到的非晶态氮化硅薄膜结构与性能进行了研究。对氮化硅薄膜的表面显微硬度和剖面显微硬度进行了测试,并对非晶态氮化硅硬度高于晶态氮化硅硬度的原因进行了探讨。
The structure and the property of amorphous silicon nitride film formed by direct current-plasma chemical vapour deposition (DC-PCVD) were analyzed. The surface micro-hardness and the cross-section microhardness of silicon nitride were tested. The reasons why the hardness of amorphous silicon nitride is higher than that of crystal silicon nitride were also discussed.
出处
《北京石油化工学院学报》
1996年第2期24-30,共7页
Journal of Beijing Institute of Petrochemical Technology
关键词
化学气相沉积
非晶态
氮化硅薄膜
显微硬度
chemical vapour deposition
amorphous
silicon nitride film
microhardness
