摘要
Cubic boron nitride (c-BN) films were successfully grown on Si(100)substrates by a helicon wave plasma-assisted chemical vapor deposition technique.The lower limits of rf substrated bias voltage and plasma density for formation of a single phase c-BN film were 350V and 4.5×10￣(10) cm￣(3),respectively. The grown c-BN films demonstrated a poor adhesion to the substrates. A postannealing treatment at 800℃ C in N_2 atmosphere was found very effective in relieving the compressive stress in the films which were thereby stabilized to improve the adhesion.
Cubic boron nitride (c-BN) films were successfully grown on Si(100)substrates by a helicon wave plasma-assisted chemical vapor deposition technique.The lower limits of rf substrated bias voltage and plasma density for formation of a single phase c-BN film were 350V and 4.5×10￣(10) cm￣(3),respectively. The grown c-BN films demonstrated a poor adhesion to the substrates. A postannealing treatment at 800℃ C in N_2 atmosphere was found very effective in relieving the compressive stress in the films which were thereby stabilized to improve the adhesion.
