摘要
The luminescence of silicon doped with trivalent rare earth erbium at about 1.54μmhas attracted considerable attention in recent years, because this emission corresponds tothe minimum attenuation of silica glass fibers and presents the possibilities of integratingelectrical and optical circuits fabricated in silicon-based materials with the maturemanufacturing technology of silicon. Recently it was observed that the presence of
基金
Project supported by the National Natural Science Foundation of China and the Chinese Academy of Sciences.
