化学沉积法及其制备的肖特基势垒的开关特性

Electroless Plating and Switch Properties of Schottky Barriers Fabricated by This Method

本文确立了一种简单、有效的制备肖特基势垒的方法──化学沉积法，并用这种方法制备出Ｐｄ—ＧａＡｓ，Ａｎ—ＧａＡｓ和Ｐｄ—ＧａＡｓ０．４１Ｐ０．５９肖特基势垒。实验发现，所制备的样品具有良好的开关特性，开关时间为１０－１ｎｓ量级。

A simple and effective method to fabricate Schottky barriers. by electroless plating, is presented Pd-GaAs, An- GaAs and Pd - GaAsO. 41 P0. 55 Schottky barriers have been fabricated by this method. Experiments revealed that they have good switch properties, their turn-on and turn-off times being about in order of 10-1ns.