摘要
It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect existed in all wafer is directly observed by 1 .0972 μm and 2 μm absorption curves obtained from a suc-cessive and automatical horizontal scan across the different bands parallelly ranged with tbe diameter of asemi-insulating GaAs wafer. Not only EL2 distribution across the wafer corresponding with that of dislocationdensities has been indicated but also the fine structure found.
It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect existed in all wafer is directly observed by 1 .0972 μm and 2 μm absorption curves obtained from a suc-cessive and automatical horizontal scan across the different bands parallelly ranged with tbe diameter of asemi-insulating GaAs wafer. Not only EL2 distribution across the wafer corresponding with that of dislocationdensities has been indicated but also the fine structure found.
