Growth and Characterization of AlInAs on InP Substrate by Molecular Beam Epitaxy

Growth and Characterization of AlInAs on InPSubstrate by Molecular Beam Epitaxy

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摘要 AlxIn1-xAs with 0.47&lex&le0.62 onto (100) oriented InP substrate was grown by molecular beam epitaxy (MBE) and characterized with X-ray double crystal diffraction, low temperature photoluminescence and an electron probe. Results show their high qualities. Strain and residual stress were studied in detail. AlxIn1-xAs with 0.47&lex&le0.62 onto (100) oriented InP substrate was grown by molecular beam epitaxy (MBE) and characterized with X-ray double crystal diffraction, low temperature photoluminescence and an electron probe. Results show their high qualities. Strain and residual stress were studied in detail.

作者陈建新李爱珍邱建华

出处《Rare Metals》 SCIE EI CAS CSCD 1994年第2期118-121,共4页 稀有金属（英文版）

关键词 ALUMINUM ARSENIC CHARACTERIZATION Crystal growth INDIUM Molecular beam epitaxy Aluminum Arsenic Characterization Crystal growth Indium Molecular beam epitaxy

分类号 TG146.21 [金属学及工艺—金属材料]

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Growth and Characterization of AlInAs on InP Substrate by Molecular Beam Epitaxy

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