摘要
This paper presents metalorganic chemical vapour deposition (MOCVD) growth of GaAs / Al_x Ga_(1-x) Assuperlattices and their application in HEMT (high electron mobility transistor). SEED (self eletrooptic ef-fect device) devices. Superlattice structures are characterized by using crosssectional transmission electronmicroscopy (XTEM). X-ray diffraction and low temperature photoluminescence (PL), and the results showthat they are in agreement with the designed parameters. The superlattice used as buffer layer in HEMTcan smooth out interface roughness. This smoothing effect is related to the migration of Ga and Al specieson the growing surface and the anisotropic growth rate of GaAs on different facets. High qualitysuperlattice with 27 satellite peaks measured by X- ray diffraction is obtained. Based on the structureparameters determined by TEM and X- ray diffraction. the calculated emission peak position of thesuperlattice is in agreement with PL results.
This paper presents metalorganic chemical vapour deposition (MOCVD) growth of GaAs / Al_x Ga_(1-x) Assuperlattices and their application in HEMT (high electron mobility transistor). SEED (self eletrooptic ef-fect device) devices. Superlattice structures are characterized by using crosssectional transmission electronmicroscopy (XTEM). X-ray diffraction and low temperature photoluminescence (PL), and the results showthat they are in agreement with the designed parameters. The superlattice used as buffer layer in HEMTcan smooth out interface roughness. This smoothing effect is related to the migration of Ga and Al specieson the growing surface and the anisotropic growth rate of GaAs on different facets. High qualitysuperlattice with 27 satellite peaks measured by X- ray diffraction is obtained. Based on the structureparameters determined by TEM and X- ray diffraction. the calculated emission peak position of thesuperlattice is in agreement with PL results.
