摘要
The haze defects on p-type (111) silicon wafers were investigated by means of chemical etching, Fouriertransform infra-red microscopy (FTIR), spreading resistance measurement. secondary ion mass spectroscopy(SLMS), transmission electron microscopy (TEM) equipped with an energy-dispersive X-ray spectrometer(EDX). The haze defects are the precipitates of silicide of metal impurities (Fe, Ni) on the wafer surface.The formation of haze defects can efficiently be inhibited by utilizing the technology of fast neutronirradiation combined with the internal gettering (IG), and then, the formation and removement mechanismof the haze defects have been discussed in this paper.
The haze defects on p-type (111) silicon wafers were investigated by means of chemical etching, Fouriertransform infra-red microscopy (FTIR), spreading resistance measurement. secondary ion mass spectroscopy(SLMS), transmission electron microscopy (TEM) equipped with an energy-dispersive X-ray spectrometer(EDX). The haze defects are the precipitates of silicide of metal impurities (Fe, Ni) on the wafer surface.The formation of haze defects can efficiently be inhibited by utilizing the technology of fast neutronirradiation combined with the internal gettering (IG), and then, the formation and removement mechanismof the haze defects have been discussed in this paper.
