摘要
The heterostructure of AIGaAs / p++GaAs/ nGaAS / iJ++-GaAs was grown by MBE technique. Thegrowth temperature of GaAs and AIGaAs were 580t and 680C . and the grow[h rate were I lim / h and0.5 l!m / h. respectively. The Be diffusion ]n n-GaAs and in n-AIGaAs was investigated. The temperature ofeffusion cell for Be evaporation was 440￣ 650C . The heterojunction bipolar transister 4HBT) was madefroin AIGaAs GaAs heterostructure. On the basis of interstitialsubstitutional model authors realized suppression of Be dittusion into nAIGaAs and iJ-GaAs. The current gain lj and cut-ofT frequency oi' the HBTare 60 and 25 GHz. respectively.
The heterostructure of AIGaAs / p++GaAs/ nGaAS / iJ++-GaAs was grown by MBE technique. Thegrowth temperature of GaAs and AIGaAs were 580t and 680C . and the grow[h rate were I lim / h and0.5 l!m / h. respectively. The Be diffusion ]n n-GaAs and in n-AIGaAs was investigated. The temperature ofeffusion cell for Be evaporation was 440￣ 650C . The heterojunction bipolar transister 4HBT) was madefroin AIGaAs GaAs heterostructure. On the basis of interstitialsubstitutional model authors realized suppression of Be dittusion into nAIGaAs and iJ-GaAs. The current gain lj and cut-ofT frequency oi' the HBTare 60 and 25 GHz. respectively.
