A　Semiconductor　Position　Sensitive　Detector　Fabricated　by　Ion　Implantation　Technique

A Semiconductor Position Sensitive Detector Fabricated by Ion Implantation Technique

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摘要ＡＳｅｍｉｃｏｎｄｕｃｔｏｒＰｏｓｉｔｉｏｎＳｅｎｓｉｔｉｖｅ　ＤｅｔｅｃｔｏｒＦａｂｒｉｃａｔｅｄｂｙＩｏｎＩｍｐｌａｎｔａｔｉｏｎＴｅｃｈｎｉｑｕｅ￥ＴａｎＪｉｌｉａｎ；ＬｉＣｕｎｆａｎａｎｄＢａｏＺｈｉｑｉｎＡｒｅｓｉｓｔａｎｃ...

作者 Tan Jilian Li Cunfan and Bao Zhiqin

出处《IMP & HIRFL Annual Report》 1994年第0期35-35,共1页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

分类号 TL814 [核科学技术—核技术及应用]

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IMP & HIRFL Annual Report

1994年第0期

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A　Semiconductor　Position　Sensitive　Detector　Fabricated　by　Ion　Implantation　Technique

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