STUDIES　OF　THE　LATTICE　DAMAGE　CAUSED　BY　ION　IMPLANTATION　INTO　AlxGa(1－xAS／GaAs

STUDIES OF THE LATTICE DAMAGE CAUSED BY ION IMPLANTATION INTO Al_xGa_(1-x_AS/GaAs

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摘要 The lattice damage Produced in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and elevated temperature was investigated by using Rutherford beckscattering/channeling (RBS/C ) technique and the results of the damage accumulation observed in the expetriment are explained by the relative bond Strength obtained from moleculatorbital calculation of a group of atomic cluster simulated GaAs and AlxGa1-xAs/GaAs. The lattice damage Produced in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and elevated temperature was investigated by using Rutherford beckscattering/channeling (RBS/C ) technique and the results of the damage accumulation observed in the expetriment are explained by the relative bond Strength obtained from moleculatorbital calculation of a group of atomic cluster simulated GaAs and AlxGa1-xAs/GaAs.

出处《Chinese Chemical Letters》 SCIE CAS CSCD 1994年第8期707-710,共4页 中国化学快报（英文版）

分类号 O611.6 [理学—无机化学]

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Chinese Chemical Letters

1994年第8期

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STUDIES　OF　THE　LATTICE　DAMAGE　CAUSED　BY　ION　IMPLANTATION　INTO　Al<sub>x</sub>Ga<sub>(</sub>1－x<sub>A</sub>S／GaAs

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STUDIES OF THE LATTICE DAMAGE CAUSED BY ION IMPLANTATION INTO Al<sub>x</sub>Ga<sub>(</sub>1－x<sub>A</sub>S／GaAs

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STUDIES　OF　THE　LATTICE　DAMAGE　CAUSED　BY　ION　IMPLANTATION　INTO　Al<sub>x</sub>Ga<sub>(</sub>1－x<sub>A</sub>S／GaAs