砷化镓功率场效应管早期烧毁的失效分析

BURNOUT CHARACTERISTICS OF MICROWAVE GaAs POWER FET

采用扫描俄歇微探针、扫描电子显微镜、电子探针微区分析仪和Ｘ射线透射仪等多种分析手段分析了一种Ｃ波段砷化镓功率场效应管早期烧毁失效的现象。初步建立了烧毁失效的模式，给出了相应的失效频数分布及其表面形貌状态。分析结果指出，烧毁失效模式中源一漏烧毁占较大的比例；其次是由于材料及器件制备工艺过程不完善而引起的空气桥烧毁，热斑烧毁，源或漏极条边缘毛刺、芯片表面缺陷、沾污和不可动多余物引起的烧毁失效。文章就烧毁失效的机理进行了分析和讨论。

urnout characteristics of C band GaAs power MESFET are studied by-means of Scanning Auger Microprobe(SAM),Secondary Electron Microscope(SEM),Electron Probe Microarea Analysis (EPMA),X-ray Transmission Microscope,etc.in this paper. The burn out modes are suggested and discussed with the presentation of the associate distribution graph of failure rate and their surface topography. The results indicate that the source-drain burnout is the primary failure mode ill GaAs power BET, with the other failure modes including the“air-bridge”burnout,heat-spot burnout, and that caused by“thorn”at drain or source edge, defect and contamination“particle”in the chip and the imperfect during the process of material and device. The failure mechanisms are also discussed.