激光辐照NTD—Si形成P—N结的研究

The P-N Junction Formation of NTD Silicon by Laser and Investigation of There Properties

本文扼要阐述了用CO_2辖续激光辐照NTD—St生成P—N结的具体过程与条件并根据实际数据对其生成机理作了合理分析。

In This paper,we present a new method to make The P--N Junetion in NTD silicon and inverstigation the electrical properties,such as,conductance tyne,sheet vesistance,Voctage--current characteristic. in order to illustrate above result we persent a model.