摘要
Switching phenomena in some semiconductor wafers and thin films were observed early. However, to our knowledge, there is no report about the switching behaviour of diamond thin film. Because the diamond thin film possesses a great number of good properties, such as wide band gap, high breakdown voltage, high electron mobilities and high electron saturation velocity, the investigation on the switching behaviour of diamond thin film will be of great value for achieving high voltage and high power switching devices. We
