摘要
1 Introduction In recent years, the irradiation defects in CZ-silicon have been studied extensively because the neutron-irradiation defects in CZ-silicon play a key role in controlling the yield and performance of VLSI circuits. However, because of the impurities (oxygen, about 10<sup>18</sup> atoms/cm<sup>3</sup>) in silicon, behavior of irradiation-defects during heat-treatment has been proved to be complicated, while slices are subjected to neutrons irradiation and heat-treatment, the irradiation defect behavior has not been clearly understood yet.
基金
Project supported by the National Natural Science Foundation of China.
