摘要
1 Introduction The Sol-Gel process has received a great deal of attention, primarily because it can offer many advantages over the conventional process, such as high purity, molecular-level homogeneity, easier composition control and reduced processing temperature. These advantages make Sol-Gel process become one of the promising fabrication methods for ferroelectric ceramics. Sol-Gel-derived thin films of BaTiO<sub>3</sub>, PbTiO<sub>3</sub>, Pb (Zr, Ti)O<sub>3</sub>, PLZT and others have all been reported, but there is little information relating to the potential