水热-溶胶凝胶法制备PZT薄膜

Preparation of PZT thin films by hydrothermal-sol-gel method

采用水热-溶胶凝胶法制备了锆钛酸铅(PZT)压电陶瓷薄膜。首先利用水热法处理Si基板,使之生成SiO2/Si层,然后采用旋涂法在处理好的Si基板上涂覆摩尔比r(Zr∶Ti)为52∶48的PZT前驱体溶胶。研究了基板处理方式、退火温度以及涂胶层数对PZT薄膜结晶性能、表面形貌及厚度的影响。结果表明:水热处理Si基板对PZT薄膜性能有很大提高;随着退火温度的提高,薄膜的结晶性提高,表面更加致密;200℃下水热处理Si基板16 h,最终退火温度为850℃的PZT薄膜结晶性及表面形态最好。

PZT thin films were prepared by a hydrothermal-sol-gel method. The Si substrates were hydrothermally treated to be changed into SiO2/Si substrates, then the wet films were prepared by spin-coating technique using PZT precursor sol with a Zr/Ti mole ratio of 52/48. The effects of substrate treatment methods, annealing temperatures and layer numbers on the crystallinity, surface morphology and thickness of the PZT thin films were studied. The results show that the hydrothermal treatment of substrate improves properties of the film considerably; the PZT thin films crystallize better and become more compact with the increase of annealing temperature; the Si substrates hydrothermally treated at 200 ℃ for 16 h and the PZT films annealed at 850 ℃ show the best crystallization property and surface morphology.