摘要
γ-radiation damage study of photodevice and its substrate shows that γ-radiation makes the light current, current amplification factor and respond time of devices decreased, dark current increased, but junction capacitance unchanged basicly. The resistivity of substrate was slowly increased. The analysis of positron annihilation lifetime spectra demonstrated that the second lifetime component τ2 was reduced, but the corresponding intensity I2 raised. Those indicate the macroscopic and microscopic changes in substrate after γ-irradiation.
γ-radiation damage study of photodevice and its substrate shows that γ-radiation makes the light current, current amplification factor and respond time of devices decreased, dark current increased, but junction capacitance unchanged basicly. The resistivity of substrate was slowly increased. The analysis of positron annihilation lifetime spectra demonstrated that the second lifetime component τ2 was reduced, but the corresponding intensity I2 raised. Those indicate the macroscopic and microscopic changes in substrate after γ-irradiation.
