摘要
The paper reviewed the progresses of MOCVD technique used in the growth of group Ⅲ-V compound semiconductor materials and the preparation of devices in Hebei Semiconductor Research Institute (HSRI), and also introduced some of the recent progresses in China.
The paper reviewed the progresses of MOCVD technique used in the growth of group Ⅲ-V compound semiconductor materials and the preparation of devices in Hebei Semiconductor Research Institute (HSRI), and also introduced some of the recent progresses in China.
