摘要
Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.
Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.
