NON-EQUILIBRIUM SEGREGATION OF Si ON Al-0.35 wt-% Si ALLOY SURFACE

NON-EQUILIBRIUM SEGREGATION OF Si ON Al-0.35 wt-% Si ALLOY SURFACE

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摘要 Si segregation was observed in the vacancy condensation pits,formed by supersaturated vacancies beneath the oxidation layer of Al-0.35wt-％Si alloy,by optical microscopy,X- ray photoelectron spectroscopy and microhardness tests.This phenomenon could only be explained by vacancy-Si complex inducing non-equilibrium segregation. Si segregation was observed in the vacancy condensation pits,formed by supersaturated vacancies beneath the oxidation layer of Al-0.35wt-％Si alloy,by optical microscopy,X- ray photoelectron spectroscopy and microhardness tests.This phenomenon could only be explained by vacancy-Si complex inducing non-equilibrium segregation.

作者 CHEN Niug YU Zongsen University of Science and Technology Beijing,Beijing,China professor,Department of Materials Physics,University of Science and Technology Beijing,Beijing 100083,China

出处《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1993年第8期98-101,共4页 金属学报（英文版）

关键词 non-equilibrium segregation VACANCY AI-Si alloy SURFACE SI non-equilibrium segregation vacancy AI-Si alloy surface Si

分类号 TG-55 [金属学及工艺]

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Acta Metallurgica Sinica(English Letters)

1993年第8期

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NON-EQUILIBRIUM SEGREGATION OF Si ON Al-0.35 wt-% Si ALLOY SURFACE

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