摘要
The properties of temperature dependence of conductivity σ of electron beam evaporated a-Si_(1-x)Gd_x films which was deposited on some substrates of glass and Al-foil at a substrate temperature of approximately 300℃ in a background pressure about 2×10^(-4) Pa with a deposition speed about 0.2 nm/s was analyzed and studied.The forms of Gd^(3+) ions in the films,the dangling bond compensation achieved by Gd^(3+) ions and the impurity states compensation achieved by structural disorder aroused by doping Gd ele- ment into a-Si film could be the key factors in resolving the properties of conduction in a-Si_(1-x)Gd_x films.In the temperature region of 290 K<T<500 K,an analysis of conductivity allows to reveal two conductivity regions:(1)conducting conduction of the carriers excited to conductive band,(2)hopping conduction of the carriers in the impurity band near E_F level thermo-excited.
The properties of temperature dependence of conductivity σ of electron beam evaporated a-Si_(1-x)Gd_x films which was deposited on some substrates of glass and Al-foil at a substrate temperature of approximately 300℃ in a background pressure about 2×10^(-4) Pa with a deposition speed about 0.2 nm/s was analyzed and studied.The forms of Gd^(3+) ions in the films,the dangling bond compensation achieved by Gd^(3+) ions and the impurity states compensation achieved by structural disorder aroused by doping Gd ele- ment into a-Si film could be the key factors in resolving the properties of conduction in a-Si_(1-x)Gd_x films.In the temperature region of 290 K<T<500 K,an analysis of conductivity allows to reveal two conductivity regions:(1)conducting conduction of the carriers excited to conductive band,(2)hopping conduction of the carriers in the impurity band near E_F level thermo-excited.
