ZnSe及ZnSe:N的光致发光

PHOTOLUMINESCENCE OF ZnSe AND ZnSe:N

本文报导了我们用常压MOCVD法生长的ZnSe单晶膜的光致发光特性。在77K的光致发光光谱中,ZnSe的激子发射峰位于4450,其半高宽为12.6mev。在探索ZnSe反型的过程中,我们在生长过程中掺入氮杂质,获得了氮替代硒的浅受主,其离化能为91mev。

This paper reports the Luminescence properties of ZnSe and ZnSe: N/ GaAs (100) grown by atmospheric pressure metal organic chemical vapor deposition. The excitonic emission peak which placed at 445nm with HWFM of 12.6mev has been observed, Which shows the formation of the highquality single Crystal films. In order to obtain p-type ZnSe semiconductors, We made a doping expcriment for ZnSe/ GaAs (001) .The NH_3 is used as the nitrogen dopants. We observed the N_(Se) emission peak which energy is lower 91mev than the excitonic peak of ZnSe. We attributed it to the recombination due to the transition between the conduction band and the shallow acceptor enery-level (N_(Se)) .