摘要
测量了ⅢA族元素镓(Ga)、铟(In)、铊(T1)原于的激光增强电离(LEI)光谱。给出了GaI 287.424nm,GaI 294.364nm,GaI 294.418nm;InI 283.692nm,InI 285.814nm,InI 293.263nm,InI 325.609nm,InI 325.856nm;TII 291.832nm,TII 292.152nm的10条LEI光谱线,相应的低态和高态的能位、电子构型和光谱项。由LEI光谱图计算了各条LEI光谱线的检测限,镓、铟、铊的检测限分别为8ng/ml,1.2ng/ml和15ng/ml。
The Laser Enhanced Ionization (IEI) Spectrometry of IIIA series elements Ga, In, T1 has been measured. The energy level, the electronic configuration and the spectral term of lower state and upper state of GaI 287. 424nm, GaI 294. 364nm, GaI 294. 418nm; InI 325.856nm, InI 325. 609nm, InI 293. 263nm, InI 285. 814nm, InI 283. 692nm; T1I 291. 832nm, T1I 292. 152nm LEI spectral lines have been obtained. The detection limits of the ten LEI spectral lines have been given by the LEI spectrum of Ga, In, T1. The detection limits of Ga, In, TI are showed to be 8ng/ml, 1.2ng/ ml, 15ng/ml.
出处
《中国计量学院学报》
1990年第1期3-11,共9页
Journal of China Jiliang University
基金
中国科学院安徽光机所激光光谱学开放实验室科学基金资助课题
关键词
激光增强电离
IIIA族元素镓、铟、铊
灵敏检测
检测限
Laser Enhanced Ionization (LEI)
Trace Elements
Sensitive Detection
IIIA Series Elements Ga
In
T1
Limitation of Detection
