摘要
Hydrogen contents and its depth profiles, obtained by nuclear reaction induced by fluorine ion, have been investigated for a series of thermal annealed amorphous silicon and implanted amorphous carbon (diamond-like carbon) films. For dual layer amorphous silicon films, it is shown that hydrogen of either a-Si:H or a-SiNx:H sublayer moves obviously at different annealing conditions. For diamond-like carbon (DLC) films, measurements show that, by argon implantation, hydrogen contents decrease obviously with the increase of implanting dose. The decrease of hydrogen contents results in the decrease of diamond- like (SP3) and graphite-like (SP2) components of DLC films. But, the ratios of SP2 and SP3 increased, and the resistivities decrease with the increase of implanting dose.
Hydrogen contents and its depth profiles, obtained by nuclear reaction induced by fluorine ion, have been investigated for a series of thermal annealed amorphous silicon and implanted amorphous carbon (diamond-like carbon) films. For dual layer amorphous silicon films, it is shown that hydrogen of either a-Si:H or a-SiNx:H sublayer moves obviously at different annealing conditions. For diamond-like carbon (DLC) films, measurements show that, by argon implantation, hydrogen contents decrease obviously with the increase of implanting dose. The decrease of hydrogen contents results in the decrease of diamond- like (SP3) and graphite-like (SP2) components of DLC films. But, the ratios of SP2 and SP3 increased, and the resistivities decrease with the increase of implanting dose.
