摘要
Rapid thermal annealing (RTA) of Si+-implanted SI-GaAs was studied in an annealing system using a halogen lamp heater. Good electrical properties in the activated layers were achieved. The co-implantation of phosphorus (P+) with Si+ into SI-GaAs can improve mobility of the ion implanted layer. Hall mobility of 4600-4700 cm2/V · s and activation efficiencies of 75-85% were obtained. These results are better than those obtained from samples without P+ co-implantation. Deep level transient spectroscopy measurements showed that the number of deep levels and their concentrations decreased. P atoms occupy the As vacancies and enhance the activation efficiency and average Hall mobility. GaAs MESFETs with 0.5 W output power and associated gain of 3.5 dB at 6 GHz were obtained by this method.
Rapid thermal annealing (RTA) of Si+-implanted SI-GaAs was studied in an annealing system using a halogen lamp heater. Good electrical properties in the activated layers were achieved. The co-implantation of phosphorus (P+) with Si+ into SI-GaAs can improve mobility of the ion implanted layer. Hall mobility of 4600-4700 cm2/V · s and activation efficiencies of 75-85% were obtained. These results are better than those obtained from samples without P+ co-implantation. Deep level transient spectroscopy measurements showed that the number of deep levels and their concentrations decreased. P atoms occupy the As vacancies and enhance the activation efficiency and average Hall mobility. GaAs MESFETs with 0.5 W output power and associated gain of 3.5 dB at 6 GHz were obtained by this method.
