摘要
The physical and electrical properties of BF<sub>2</sub><sup>+</sup> implanted polysilicon films subjectedto rapid thermal annealing（RTA）are presented.It is found that the out diffusion of F and itssegregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalousmigration.Fluorine bubbles were observed in BF<sub>2</sub><sup>+</sup> implanted samples at doses of 1×10<sup>15</sup> and5×10<sup>15</sup>cm<sup>-2</sup> after RTA.
The physical and electrical properties of BF_2^+ implanted polysilicon films subjected to rapid thermal annealing(RTA)are presented.It is found that the out diffusion of F and its segregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalous migration.Fluorine bubbles were observed in BF_2^+ implanted samples at doses of 1×10^(15) and 5×10^(15)cm^(-2) after RTA.
