摘要
This paper deals with 2-D simulation of GaAs MESFET,which includes velocityovershoot effects by using energy transport model suitable for submicron devices.Computationtime is greatly reduced by simplifying the model and using fast convergence algorithms,e.g.Gummel interaction and ICCG method.The program shows good stability and convergence.Several types of GaAs MESFET structures,e.g.epitaxial,ion-implanted and buried P-layer,have been simulated.The results show that buried P-layer can decrease carrier’s injections intosubstrate and improve device performance.The results are also used to study carefully thevelocity overshoot effects.By comparison of results of energy transport model and drift-diffusionmodel,the limitation of drift-diffusion-model is derived.
This paper deals with 2-D simulation of GaAs MESFET,which includes velocity overshoot effects by using energy transport model suitable for submicron devices.Computation time is greatly reduced by simplifying the model and using fast convergence algorithms,e.g. Gummel interaction and ICCG method.The program shows good stability and convergence. Several types of GaAs MESFET structures,e.g.epitaxial,ion-implanted and buried P-layer, have been simulated.The results show that buried P-layer can decrease carrier's injections into substrate and improve device performance.The results are also used to study carefully the velocity overshoot effects.By comparison of results of energy transport model and drift-diffusion model,the limitation of drift-diffusion-model is derived.
