n-型SrTiO_3半导瓷非线性V-I关系研究 Ⅰ 非线性V-I关系的定性描述

A Study of the Nonlinear Ⅴ-Ⅰ Characteristics for n-type SrTiO_3 Semiconducting Ceramics Ⅰ. Qualitative Description of the Nonlinear Ⅴ-Ⅰ Characteristics

本文对一次烧成工艺和二次烧成法制成的n-型SrTiO_3半导瓷的非线性V-Ⅰ关系作了定性描述。着重讨论了V-Ⅰ特性曲线3个区的导电机理。根据烧成工艺,建立了改进的双层晶界势垒模型。在此基础上,对n-型SrTiO_3半导瓷非线性V-Ⅰ特性曲线上3个特征区的电压电流关系作了定量推导和计算。对计算结果与实验结论作了比较,给出不超过3％的最大误差。

The nonlinear V--I characteristics are qualitutively described for the n--type SrTiO_3semiconducting ceramics manufactured by single--step firing and/or double--step firing. The conductionmechanisms of the three regions within the nonlinear V--I characteristics are emphatically discussed. thetwo--layer grain bollndary barrier layer model, accordrig to the firing process employed, is suggested.Using this theoretital model, the nonlinear V-I relationships are quantitutively deduced for the n--TypeSrTiO_3 sendconducting ceramics. The maxhoum error of the deduced results is not greater than 3 % ascompored to the experimental data.