摘要
TiN的俄歇分析十分困难。这主要是由于主N俄歇跃迁KL_(23)L_(23)(379eV)与Ti L_3M_(23)M_(23)(387eV)重叠的缘故。本文采用窄能量窗口选择和谱图叠减处理法精确的分析了TiN_X/TiSi_X双层结构中N的深度分布,同时给出了有关Ti/Si,Ti/SoO_2/Si在快速热退火后界面反应和产物的结果。
AES analysis of TiN is very problematic, This is due to the overlapping of the principal nitrogen Auger transition KL_(23)L_(23)(379 eV)and Ti L_3M_(23)M_(23)(387 eV). In the procedure used in the paper a reliable depth profile of nitrogen in TiN_x/ TiSi_x bilayer structure can be obtained, The results on interaction of Ti/Si and Ti/SiO_2/Si during RTA in N_2 and Ar ambient have also been presented.
出处
《真空科学与技术学报》
EI
CAS
CSCD
1990年第1期7-10,共4页
Chinese Journal of Vacuum Science and Technology