混合膜镀制半导体激光放大器

FABRICATION OF THE SEMICONDUCTOR LASER AMPLIFIERS WITH THE MIXTURE COATINGS

首次采用ZnS/MgF_2混合膜料并借助主动监控法来镀制半导体激光放大器。测量结果表明镀膜后二极管激光器自发辐射谱在镀前阈值电流时的调制度外推值为1.27%,即镀后激光二极管两端面剩余反射率的乘积为4×10^(-6)。

The mixture of ZnS/MgF^2 has been used to AR coat the semiconductor laser amplifiers with the aid of the active monitoring method. The extroplated value of the modulation index on the spectral pattern of the spontaneous emission of the diode, biased at the precoating threshold, is 1.27%,i.e. the product of the residual reflectivities at the two facets of the diode is 4×10^(-6).