摘要
本文主要介绍采用S枪磁控反应溅射技术制备SnO_2气敏薄膜材料.运用扫描电子显微镜、透射电子显微镜、X衍射仪、俄歇电子能谱仪及X光电子能谱仪进行了SnO_2薄膜表面形貌、晶格结构分析,并与不同工艺条件下的组分分析比较,为选择SnO_2薄膜制备工艺提供了重要的实验依据.
The matting gas sensitive film material from SnO2 by the S-gun Sputtering technique was introduced. The surface pattern, crystal constitution analysis, and component analysisof the filmed SnO2 under several processing condition were made with SEM, TEM, AES, XPS and X-ray diffractscope.The result of these material analysis provided important basis for the matting technology of SnO2 film.
出处
《传感技术学报》
CAS
CSCD
1990年第2期31-35,共5页
Chinese Journal of Sensors and Actuators
