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用PCVD法制备(TiAl)N膜的研究

Deposition of (TiAl)N Coatings dy DC-PCVD
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摘要 本文介绍了在PCVD设备中用固态AlCl_3制备(TiAl)N膜。结果表明,(TiAl)N膜的含Al量与AlCl_3的蒸发温度成正比,但膜内Cl含量却无明显变化。(TiAl)N膜保持了TiN膜的面心立方晶体结构,但其晶格常数变小,织构变弱,组织略有细化。(TiAl)N膜的显微硬度略高于或等于TiN膜的硬度,但抗高温氧化性有较大幅度提高。 A new mothod of preparing(TiAl) N coatings by evaporating solid AlCl_3 in the DC—PCVD apparatus is presented. (TiAl)N coatings were successfully deposited onto high-speed steel substrates at temperatures about 550℃.Experimental results indicated that the Al content in the coatings increased in direct ratio with the evaporating temperature of AlCl_3 while the chlorine content remained almost the same within the experimental range.By x-ray diffraction it was shown that both (TiAl) N and TiN had the same FCC structure, but the lattice parameter and the degree of the preferred orientation of (TiAl)N coatings were less than in the case or of TiN. (TiAl)N coatings grew with columnar grain, being silghtly thinner than TiN. Although the hardness of (TiAl)N coatings was similar to that of TiN coatings, their resistance to high temperature oxidation was much higher.
出处 《青岛科技大学学报(自然科学版)》 CAS 1990年第4期30-35,共6页 Journal of Qingdao University of Science and Technology:Natural Science Edition
基金 国家自然科学基金
关键词 PCVD法 (TiAl)N膜 plasma CVD (TiAl) N coating
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