MOCVD掺A_s的S_nO_2透明导电膜

Transparent Conductive Film of As-Doped SnO_2

本文采用有机金属化合物气相沉积（MOCVD）技术制备了可见光透过率】90％（厚度为102-104）、薄层方块电阻值为38-56Ω/□的SO2·A,多晶透明导电薄膜,并简要报道了利用X射线衍射、电子衍射、扫描电子显微镜以及紫外可见吸收光谱等方法对膜层结构及性能的研究结果。

The metallorganic chemical vapour deposition (MOCVD) technique is employed for the growth of As doped thin film of SnO_2.The SnO_2, As film of 1500a thickness with sheet resistance of 38-56 ohm/square and light transmission above 90% in the visible spectral region can be readily prepared. The studies of the As-Doped SnO_2 film with x-ray diffraction, electron diffraction and UV absorbance techniques are reported.