AlInN/GaN高电子迁移率晶体管的研究与进展

Research and progress of AlInN/GaN high electron mobility transistor

由于GaN基材料的高温性能好,AlInN/GaN异质界面具有更高的二维电子气密度,因而AlInN/GaN高电子迁移率晶体管(HEMT)具有更高的工作频率和饱和漏电流,以及更强的抗辐射能力,近年来成为微波功率器件和放大电路的研究热点。首先总结了AlInN材料的基本性质,分析了AlInN/GaNHEMT的材料生长和器件结构设计,最后总结了其在高频、大功率方面的最新进展。

Due to the merits of high temperature,high frequency operation and good anti-radiation capability,AlInN/GaN high electron mobility transistors（HEMTs） have become the hot issue for microwave power device and amplifier.Firstly,the physical properties of AlInN material and AlInN/GaN heterostructure are briefly introduced,then the epitaxial growth and device structure are analyzed.The recent progress of microwave power AlInN/GaN HEMTs is summarized in detail,and the issues for further improvement of device performance are discussed finally.