NiCr_2O_4/TiO_2薄膜光阳极的制备及性能研究

Study on the preparation and properties of NiCr_2O_4/TiO_2 thin film photoanode

采用柠檬酸法制备了尖晶石型NiCr2O4纳米晶,然后掺合到P25(degussa TiO2)中,制备成NiCr2O4/TiO2薄膜光阳极,并组装成染料敏化太阳电池(DSSC),对其光电性能进行表征。研究发现NiCr2O4/TiO2形成界面势,NiCr2O4的扩散形成电势分布,促使光生电子和空穴向相反方向迁移。当NiCr2O4含量为1%(质量分数)时,与纯TiO2薄膜光阳极相比,光电转化效率(η)提高了30.8%,电池单色光转化率(IPCE)提高了13%(500nm)。

NiCr2O4/TiO2 thin film photoanode were prepared by doping spinel-type NiCr2O4 nanocrystalline prepared by the citrate method into P25（degussa,TiO2）,and then assembled into dye-sensitized solar cells（DSSC） and characterized the photoelectric properties.The study showed that the NiCr2O4/TiO2 induced interface potential and the diffuseness of NiCr2O4 formed electric potential distribution,which promoted photogenerated electrons and electron hole transfered in an opposite direction.When the doping amount of NiCr2O4 was 1wt%,compared to the pure TiO2 thin film photoanode,the cell incident monochromatic photo-to-current conversion efficiency（IPCE）and photoelectric conversion efficiency（η） increased by 13%,30.8%,respectively.