以乙醇作溶剂电沉积制备CIGS薄膜

Preparation of CIGS Thin Films by Electrodeposition Method Using Ethanol as a Solvent

利用恒电位电沉积法在以乙醇为溶剂的溶液中制备了铜铟镓硒(CIGS)薄膜.并采用扫描电子显微镜(SEM)、X射线能谱仪(EDS)、X射线衍射仪(XRD)和紫外-可见-近红外(UV-VIS-NIR)分光光度计分别对薄膜的形貌、成分、晶体结构和吸收特性进行了表征.结果表明在-1.6V(相对于饱和甘汞电极电位)工作电位下沉积的薄膜经450°C退火后能够形成形貌均匀致密、结晶性良好、带隙约为1.17eV的黄铜矿结构CuIn0.7Ga0.3Se2薄膜.实验过程中发现,以乙醇为溶剂可以有效避免在水溶液中出现的析氢现象,减小了沉积电位的限制.

We prepared copper indium gallium diselenide （CIGS） thin films by potentiostatic electrodeposition in an ethanol solution. The thin films were characterized by scanning electron microscopy （SEM）, X-ray energy dispersive spectrometry （EDS）, X-ray diffraction （XRD）, and UV-visible-near infrared （UV-VIS-NIR） spectrophotometry to determine their morphology, composition, crystal structure, and absorption properties. The results show that the chalcopyrite structured Culn07Ga0.3Se2 thin films can be obtained by annealing the electrodeposited films at -1.6 V （vs SCE） at 450℃. The obtained thin film has uniform morphology, good crystallinity, and a bandgap of about 1.17 eV. We found that ethanol as a solvent can effectively avoid the hydrogen evolution phenomenon, which often occurs in aqueous solution and reduces the deposition potential limitation.