由等离激元观察电离辐射引起的SiO_2禁带变化

Using Plasmon to Observe the Change of Band Gap for SiO_2 by Ionization Radiation

从电子非弹性平均自由程的计算方程,推导出一个利用等离激元峰位计算禁带宽度变化的公式,同时应用该公式确定了电离辐射引起的SiO2禁带变化并就实验现象的机制进行了探讨.

In accordance with the equation for calculating electron inelastic mean free paths, one formula was developed to estimate the changes of band gap of SiO2 using the plasmon energy. The application of the formula suggested that there existed the change of band gap for SiO2 produced hy γradiation at the interface of SiO2/Si. Some points of mechanism to explain the experimental results are proposed.